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SSD 8TB M.2 80mm PCI-e 5.0 x4 NVMe 2.0, V-NAND, Samsung 9100 PRO (MZ-VAP8T0BW)

Samsung 8806095811680 MZ-VAP8T0BW SSDSAM272
BAR Code: 8806095811680
SKU Code: MZ-VAP8T0BW
User Code: SSDSAM272
Warranty: 5 years
SSD 8TB M.2 80mm PCI-e 5.0 x4 NVMe 2.0, V-NAND, Samsung 9100 PRO (MZ-VAP8T0BW)
In stock
€2,399.98
-0%
€2,399.98

The Samsung 9100 Pro is an NVMe M.2 SSD with a PCIe 5.0 x4 interface and 8TB of storage. It reaches read speeds of up to 14,800 MB/s and write speeds of up to 13,400 MB/s. It is suitable for designers, photographers, and video editors, as well as for AI content creation and gaming.

PCIe 5.0 SPEEDS

Accelerate your work and gaming with PCIe 5.0 read and write speeds. Large files transfer, copy, and move up to 2x faster than on the Samsung 990 Pro.

EXPERIENCE SPEED

The Samsung 9100 Pro achieves random read speeds of up to 2,200* kIOPS and write speeds of up to 2,600* kIOPS. This ensures fast AI content creation, game loading, seamless multitasking, and effortless creation or design. (*depends on capacity)

 

WIDE COMPATIBILITY

The 9100 Pro is compatible with both laptops and desktop PCs and is available in various capacities. It is excellent for video production, design, and performs exceptionally well in gaming.

COOL AND FAST

The drive is equipped with a 5nm controller that is 49% more energy-efficient than the 990 Pro. Cooling is also optimized to ensure consistent performance without slowdowns.

 

Specifications

  • Interface: PCIe 5.0 x4, NVMe 2.0
  • Form Factor: M.2 2280
  • NAND: Samsung V NAND TLC
  • Controller: Samsung
  • Cache Memory: 4 GB LPDDR4X
  • Capacity: 8 TB
  • Sequential Read Speed: 14,800 MB/s
  • Sequential Write Speed: 13,400 MB/s
  • Random Read Speed (IOPS, QD32): 2200K
  • Random Write Speed (IOPS, QD32): 2600K
  • Power Consumption:
    • Active: 10.5 W / 8.8 W
    • Idle: 8.6 mW
  • Data Encryption: Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)

General

Size M.2
Bus PCI-e 5.0 x4 NVMe
Capacity 8,000 GB
Read speed 14,800 MB/s
Write speed 13,400 MB/s
Official website Link

Details

Chip type V-NAND TLC
Controller Samsung
Random read 2,200,000 IOPS
Random write 2,600,000 IOPS
MTBF 1,500,000 h

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