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SSD 4TB M.2 80mm PCI-e 5.0 x2 NVMe, V-NAND, Samsung 990 EVO Plus (MZ-V9S4T0BW)

Samsung 8806095575667 MZ-V9S4T0BW SSDSAM265
BAR Code: 8806095575667
SKU Code: MZ-V9S4T0BW
User Code: SSDSAM265
Warranty: 5 years
SSD 4TB M.2 80mm PCI-e 5.0 x2 NVMe, V-NAND, Samsung 990 EVO Plus (MZ-V9S4T0BW)
In stock
€600.00
-0%
€600.00

M.2 NVMe SSD with a capacity of 4 TB. Supports PCIe 5.0 x2 and PCIe 4.0 x4 interface. It delivers read speeds of up to 7250 MB/s and write speeds of up to 6300 MB/s, with random read speeds of up to 1,050k IOPS and write speeds of up to 1,400k IOPS. The drive also efficiently dissipates heat and ensures 73% lower energy consumption.

UPGRADE YOUR EVERYDAY PERFORMANCE

 

EFFICIENCY

Up to 7,250 MB/s sequential read speed, 45% faster than the previous model.

ENERGY EFFICIENCY

73% improved energy efficiency for more MB/s per watt, while maintaining performance and thermal control.

VERSATILITY

Expanded performance and fast IntelligentTurboWrite 2.0 with an increased TurboWrite operating range.

 

Features

  • Form: M.2 (2280)
  • Dimensions: 80.15 x 22.15 x 2.38 mm
  • Samsung V-NAND TLC
  • Capacity: 4 GB
  • Interface: PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0
  • Supports TRIM, S.M.A.R.T., GC, and AES 256-bit encryption (Class 0) TCG/Opal IEEE1667
  • Performance:
    • Sequential read: up to 7,250 MB/s
    • Sequential write: up to 6,300 MB/s
    • Random read: up to 1,050,000 IOPS
    • Random write: up to 1,400,000 IOPS
  • Power consumption: read 5.5 W, write 4.8 W, in sleep approx. 5 mW
  • MTBF: 1.5 million hours
  • TBW: 2400

General

Size M.2
Bus PCI-e 5.0 x2 NVMe
Capacity 4,000 GB
Read speed 7,250 MB/s
Write speed 6,300 MB/s

Details

Chip type V-NAND TLC
Controller Samsung
Random read 1,050,000 IOPS
Random write 1,400,000 IOPS
Endurance 2,400 TBW
MTBF 1,500,000 h
Official website Link

Product dimensions

Dimensions 80,15 x 22,15 x 2,38 mm
Weight 9 g

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