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SSD 1TB M.2 80mm PCI-e 5.0 x2 NVMe, V-NAND, Samsung 990 EVO

Samsung 8806095300276 MZ-V9E1T0BW SSDSAM251
BAR Code: 8806095300276
SKU Code: MZ-V9E1T0BW
User Code: SSDSAM251
Warranty: 5 years
SSD 1TB M.2 80mm PCI-e 5.0 x2 NVMe, V-NAND, Samsung 990 EVO
InStock
In stock
€114.71

Load game and save files in a flash with read and write speeds of up to 5,000/4,200 MB/s. Save the power for your performance. Get power efficiency all while experiencing up to 70% improved performance per watt over the 970 EVO Plus. Ramp things up without overheating the system. Samsung’s fine-tuned controller and heat spreading label deliver effective thermal control to avoid performance drops mid-project.

Performance

Upgrade to faster sequential read speed up to 5,000 MB/s, reaching 43% faster than the previous model.

Power efficiency

70% enhanced power efficiency compared to the previous model, supporting Modern Standby and longer battery life.

Versatility

Elevate everyday performance in gaming, business, and creative work with PCIe® 4.0 x4 and PCIe® 5.0 x2 compatibility.

  • Model Code (Capacity): MZ-V9E1T0BW (1TB) | MZ-V9E2T0BW (2TB)
  • FORM FACTOR: M.2 (2280)
  • INTERFACE: PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0
  • DIMENSION (WxHxD): 80 x 22 x 2.38mm
  • WEIGHT: Max 9.0g Weight
  • STORAGE MEMORY: Samsung V-NAND TLC
  • CONTROLLER: Samsung in-house Controller
  • CACHE MEMORY: HMB(Host Memory Buffer)
  • TRIM SUPPORT: Supported
  • S.M.A.R.T SUPPORT: Supported
  • GC (GARBAGE COLLECTION): Auto Garbage Collection Algorithm
  • ENCRYPTION SUPPORT: AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
  • WWN SUPPORT: Not supported
  • DEVICE SLEEP MODE SUPPORT: Yes
  • SEQUENTIAL READ: 1TB: Up to 5,000 MB/s | 2TB: Up to 5,000 MB/s
  • SEQUENTIAL WRITE: 1TB: Up to 4,200 MB/s | 2TB: Up to 4,200 MB/s
  • RANDOM READ (4KB, QD32): 1TB: Up to 680,000 IOPS | 2TB: Up to 700,000 IOPS
  • RANDOM WRITE (4KB, QD32): 1TB: Up to 800,000 IOPS | 2TB: Up to 800,000 IOPS
  • RANDOM READ (4KB, QD1): 1TB: Up to 20,000 IOPS | 2TB: Up to 20,000 IOPS
  • RANDOM WRITE (4KB, QD1): 1TB: Up to 90,000 IOPS | 2TB: Up to 90,000 IOPS
  • AVERAGE POWER CONSUMPTION: 1TB: Average: Read 4.9 W / Write 4.5 W | 2TB: Average: Read 5.5 W / Write 4.7 W
  • POWER CONSUMPTION: 1TB: Typical 60 mW | 2TB: Typical 60 mW
  • POWER CONSUMPTION (SLEEP): 1TB: Typical 5 mW | 2TB: Typical 5 mW
  • ALLOWABLE VOLTAGE: 3.3 V ± 5 % Allowable voltage
  • RELIABILITY (MTBF): 1.5 Million Hours Reliability (MTBF)
  • OPERATING TEMPERATURE: 0 - 70 ℃ Operating Temperature
  • SHOCK: 1,500 G & 0.5 ms (Half sine)

General

Size M.2
Bus PCI-e 5.0 x2 NVMe
Capacity 1,000 GB
Read speed 5,000 MB/s
Write speed 4,200 MB/s

Details

Chip type V-NAND
Controller Samsung
Random read 680,000 IOPS
Random write 800,000 IOPS
Endurance 600 TBW
MTBF 1,500,000 h
Official website Samsung 990 Evo

Product dimensions

Dimensions 80 x 22 x 2,38 mm
Weight 9 g

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