SSD 1TB M.2 80mm PCI-e 4.0 x4 NVMe, V-NAND, Samsung 990 PRO HeatSink

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SSD 1TB M.2 80mm PCI-e 4.0 x4 NVMe, V-NAND, Samsung 990 PRO HeatSink

BAR Code: 8806094413748

SKU Code: MZ-V9P1T0CW

User Code: SSDSAM241

Warranty: 5 years

Reach max performance of PCIe® 4.0. Experience longer-lasting, opponent-blasting speed. The in-house controller's smart heat control delivers supreme power efficiency while maintaining ferocious speed and performance, to always keep you at the top of your game.Reach max performance of PCIe® 4.0. Experience longer-lasting, opponent-blasting speed. The in-house controller's smart heat control delivers supreme power efficiency while maintaining ferocious speed and performance, to always keep you at the top of your game.

Product Details
Specifications

PCIe 4.0 speed maximised

Huge speed boost. 40% and 55% faster random read/write speeds than 980 PRO - up to 1,400K/1,550K IOPS, while sequential read/write speeds up to 7,450/6,900 MB/s reach near max performance of PCIe® 4.0. Fly high in gaming, video and 3D editing, data analysis, and more.

Breakthrough power efficiency

More power-efficient performance. Higher performance usually consumes more power. 990 PRO uses less power with up to 50% improved performance per Watt over 980 PRO. This low-power design makes max PCIe® 4.0 performance possible with optimal power efficiency.

Smart thermal solution

Sink that heat. The slim heatsink dissipates heat to prevent performance drops from overheating. Get stable heat control, and minimal fan noise for heavy-graphic gaming. The thin body is compatible with PlayStation® 5, desktops, and laptops meeting the PCI-SIG® D8 standard.

Specifications

Application: Client PCs, Game Consoles
Capacity: 2,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Form Factor: M.2 (2280)
Interface: PCIe Gen 4.0 x4, NVMe 2.0
Dimension (Pack: WxHxD): 80 x 24.3 x 8.2 mm (with heatsink)
Weight: Max 28.0g Weight
Storage Memory: Samsung V-NAND 3-bit MLC
Controller: Samsung in-house Controller
Cache Memory: Samsung 2GB Low Power DDR4 SDRAM
Special Feature:
- TRIM Support: Supported
- S.M.A.R.T Support: Supported
- GC (Garbage Collection): Auto Garbage Collection Algorithm
- Encryption Support: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
- WWN Support: Not supported
- Device Sleep Mode Support: Yes
Performance:
- Sequential Read: Up to 7,450 MB/s * Performance may vary based on system hardware & configuration
- Sequential Write: Up to 6,900 MB/s * Performance may vary based on system hardware & configuration
- Random Read (4KB, QD32): Up to 1,200,000 IOPS * Performance may vary based on system hardware & configuration
- Random Write (4KB, QD32): Up to 1,550,000 IOPS * Performance may vary based on system hardware & configuration
- Random Read (4KB, QD1):Up to 22,000 IOPS * Performance may vary based on system hardware & configuration
- Random Write (4KB, QD1): Up to 80,000 IOPS * Performance may vary based on system hardware & configuration
Environment:
- Average Power Consumption (system level): *Average: 5.5 W*Maximum: 8.5 W (Burst mode)* Actual power consumption may vary depending on system hardware & configuration
- Power consumption (Idle): Max. 50 mW * Actual power consumption may vary depending on system hardware & configuration
- Allowable Voltage: 3.3 V ± 5 % Allowable voltage
Reliability (MTBF): 1.5 Million Hours Reliability (MTBF)
Operating Temperature: 0 - 70°C Operating Temperature
Shock: 1,500 G & 0.5 ms (Half sine)
Software:
- Management SW: Magician Software for SSD management