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SSD 1TB M.2 80mm PCI-e 5.0 x4 NVMe 2.0, V-NAND TLC, Samsung 9100 PRO (MZ-VAP1T0BW)

Samsung 8806095811628 MZ-VAP1T0BW SSDSAM266
BAR Code: 8806095811628
SKU Code: MZ-VAP1T0BW
User Code: SSDSAM266
Warranty: 5 years
SSD 1TB M.2 80mm PCI-e 5.0 x4 NVMe 2.0, V-NAND TLC, Samsung 9100 PRO (MZ-VAP1T0BW)
In stock
€249.99
-0%
€249.99

The Samsung 9100 Pro is an NVMe M.2 SSD with a PCIe 5.0 x4 interface and 1TB of storage. It reaches read speeds of up to 14,700 MB/s and write speeds of up to 13,300 MB/s. It is suitable for designers, photographers, and video editors, as well as for AI content creation and gaming.

PCIe 5.0 SPEEDS

Accelerate your work and gaming with PCIe 5.0 read and write speeds. Large files transfer, copy, and move up to 2x faster than on the Samsung 990 Pro.

EXPERIENCE SPEED

The Samsung 9100 Pro achieves random read speeds of up to 2,200* kIOPS and write speeds of up to 2,600* kIOPS. This ensures fast AI content creation, game loading, seamless multitasking, and effortless creation or design. (*depends on capacity)

 

WIDE COMPATIBILITY

The 9100 Pro is compatible with both laptops and desktop PCs and is available in various capacities. It is excellent for video production, design, and performs exceptionally well in gaming.

COOL AND FAST

The drive is equipped with a 5nm controller that is 49% more energy-efficient than the 990 Pro. Cooling is also optimized to ensure consistent performance without slowdowns.

 

Specifications

  • Interface: PCIe 5.0 x4, NVMe 2.0
  • Form Factor: M.2 2280
  • NAND: Samsung V NAND TLC (V8)
  • Controller: Samsung
  • Cache Memory: 1 GB LPDDR4X
  • Capacity: 1 TB
  • Sequential Read Speed: 14,700 MB/s
  • Sequential Write Speed: 13,300 MB/s
  • Random Read Speed (IOPS, QD32): 1850K
  • Random Write Speed (IOPS, QD32): 2600K
  • Power Consumption:
    • Active: 7.6 W / 7.2 W
    • Idle: 4.0 mW / 3.3 mW
  • Intelligent TurboWrite 2.0: 114 GB
  • Data Encryption: Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)
  • TBW: 600

General

Size M.2
Bus PCI-e 5.0 x4 NVMe
Capacity 1,000 GB
Read speed 14,700 MB/s
Write speed 13,300 MB/s

Details

Chip type V-NAND TLC
Controller Samsung
Random read 1,850,000 IOPS
Random write 2,600,000 IOPS
Endurance 600 TBW

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