-0%

SSD 1TB M.2 80mm PCI-e 5.0 x2 NVMe, V-NAND, Samsung 990 EVO Plus (MZ-V9S1T0BW)

Samsung 8806095575674 MZ-V9S1T0BW SSDSAM263
BAR Code: 8806095575674
SKU Code: MZ-V9S1T0BW
User Code: SSDSAM263
Warranty: 5 years
SSD 1TB M.2 80mm PCI-e 5.0 x2 NVMe, V-NAND, Samsung 990 EVO Plus (MZ-V9S1T0BW)
In stock
€239.90
-0%
€239.90

M.2 NVMe SSD with a capacity of 1 TB. Supports PCIe 5.0 x2 and PCIe 4.0 x4 interface. It delivers read speeds of up to 7150 MB/s and write speeds of up to 6300 MB/s, with random read speeds of up to 850k IOPS and write speeds of up to 1,350k IOPS. The drive also efficiently dissipates heat and ensures 73% lower energy consumption.

UPGRADE YOUR EVERYDAY PERFORMANCE

 

EFFICIENCY

Up to 7,150 MB/s sequential read speed, 45% faster than the previous model.

ENERGY EFFICIENCY

73% improved energy efficiency for more MB/s per watt, while maintaining performance and thermal control.

VERSATILITY

Expanded performance and fast IntelligentTurboWrite 2.0 with an increased TurboWrite operating range.

 

Features

  • Form: M.2 (2280)
  • Dimensions: 80.15 x 22.15 x 2.38 mm
  • Samsung V-NAND TLC
  • Capacity: 1 GB
  • Interface: PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0
  • Supports TRIM, S.M.A.R.T., GC, and AES 256-bit encryption (Class 0) TCG/Opal IEEE1667
  • Performance:
    • Sequential read: up to 7,150 MB/s
    • Sequential write: up to 6,300 MB/s
    • Random read: up to 850,000 IOPS
    • Random write: up to 1,350,000 IOPS
  • Power consumption: read 3.4 W, write 4.2 W, in sleep approx. 5 mW
  • MTBF: 1.5 million hours
  • TBW: 600

General

Size M.2
Bus PCI-e 5.0 x2 NVMe
Capacity 1,000 GB
Read speed 7,150 MB/s
Write speed 6,300 MB/s

Details

Chip type V-NAND TLC
Controller Samsung
Random read 850,000 IOPS
Random write 1,350,000 IOPS
Endurance 600 TBW
MTBF 1,500,000 h
Official website Link

Product dimensions

Dimensions 80,15 x 22,15 x 2,38 mm
Weight 9 g

B2B

Products are intended only for resale partners.

Application for partners is available here.